2SC5606-A Datenblatt(PDF) - California Eastern Labs

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2SC5606-A Datenblatt (PDF) - California Eastern Labs

2SC5606-A Datasheet PDF - California Eastern Labs


Teilenummer	2SC5606-A

Download	2SC5606-A Download

Filegröße	329.12 Kbytes

Page	6 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

Logo

Bauteilbeschribung

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

2SC5606-A Datasheet (PDF)

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Download Datenblatt

2SC5606-A Datasheet PDF - California Eastern Labs


Teilenummer	2SC5606-A

Download	2SC5606-A Click to download

Filegröße	329.12 Kbytes

Page	6 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

Logo

Bauteilbeschribung	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

2SC5606-A Datenblatt (HTML) - California Eastern Labs

2SC5606-A Produktdetails

FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package

Ähnliche Teilenummer - 2SC5606-A

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC5606-A	73Kb / 7P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Renesas Technology Corp	2SC5606-A	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

Ähnliche Beschreibung - 2SC5606-A

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC5606	68Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
	2SC5606	73Kb / 7P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
California Eastern Labs	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
California Eastern Labs	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
Renesas Technology Corp	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

Über California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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