Description

The ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

Features

• Low Noise Figure:

   1.4 dB Typical at 12 GHz

• High Associated Gain:

   9.0 dB Typical at 12 GHz

• High Output Power:

   17.5 dBm Typical P 1 dB at 12 GHz

• Cost Effective Ceramic

   Microstrip Package

• Tape-and-Reel Packaging

   Option Available[1]