Description
The ATF-13736 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.

Features
• Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz
• High Associated Gain: 9.0␣ dB Typical at 12␣ GHz
• High Output Power: 17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available[1]