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CGHV35150 Datenblatt (PDF) - Cree, Inc

CGHV35150 Datasheet PDF - Cree, Inc
Teilenummer CGHV35150
Download  CGHV35150 Download
Filegröße   853.99 Kbytes
Page   10 Pages
Hersteller  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc
Bauteilbeschribung 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CGHV35150 Datasheet (PDF)

Go To PDF Page Download Datenblatt
CGHV35150 Datasheet PDF - Cree, Inc

Teilenummer CGHV35150
Download  CGHV35150 Click to download

Filegröße   853.99 Kbytes
Page   10 Pages
Hersteller  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc
Bauteilbeschribung 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CGHV35150 Datenblatt (HTML) - Cree, Inc




Ähnliche Teilenummer - CGHV35150

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WOLFSPEED, INC.
CGHV35150 WOLFSPEED-CGHV35150 Datasheet
1Mb / 10P
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Rev.1.4, 2022-12-2
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Ähnliche Beschreibung - CGHV35150

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Cree, Inc
CGHV14250 CREE-CGHV14250 Datasheet
1Mb / 11P
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
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1Mb / 11P
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
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573Kb / 6P
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
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765Kb / 9P
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
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815Kb / 11P
400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
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WOLFSPEED, INC.
CGHV14250 WOLFSPEED-CGHV14250 Datasheet
1Mb / 12P
250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems
Rev. 3.0, 2022-9-30
CGHV14500 WOLFSPEED-CGHV14500 Datasheet
3Mb / 20P
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Rev. 5.0, 2022-7-27
CGHV35120F WOLFSPEED-CGHV35120F Datasheet
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120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems
Rev. 1.0, 2022-8-3
CGHV35150 WOLFSPEED-CGHV35150 Datasheet
1Mb / 10P
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Rev.1.4, 2022-12-2
More results




Über Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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