Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Moreover, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.

Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 µs minimum short circuit withstand time at
TJ=150 °C
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance

Applications
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
• Power factor correction
• High frequency converters