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Teilenummer	PTVA042502EC

Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 - 806 MHz

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Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Ähnliche Teilenummer - PTVA042502EC

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTVA042502EC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTVA042502ECV1R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTVA042502ECV1R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTVA042502ECV1R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTVA042502ECV1R250XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTVA123501EFC	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz Rev. 05.1, 2016-04-26
	PTVA042502EFC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTFB182503EFL	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10
	PTFA180701EF	4Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 03.2, 2016-06-21
	PTFA080551EF	4Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-16
	PTVA043502EC	1Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz Rev. 02.2, 2017-02-09
Cree, Inc	PTVA123501EC	753Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz
	PTVA047002EV	449Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 ??806 MHz
	PTVA043502EC	489Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz
WOLFSPEED, INC.	PTVA047002EV	423Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Rev. 05, 2018-08-20