| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
International Rectifier |
IRF6621
|
254Kb / 9P |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
|
Advanced Power Electron... |
AP01L60AT
|
111Kb / 5P |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Integrated Device Techn... |
IDT8V19N476-01I
|
51Kb / 2P |
Fourth generation FemtoClock
|
|
841N4830
|
687Kb / 28P |
Fourth generation FemtoClock
|
|
IDT8N3S272
|
474Kb / 18P |
Fourth generation FemtoClock
|
|
IDT8N3SV75
|
384Kb / 19P |
Fourth generation FemtoClock
|
Lumileds Lighting Compa... |
DS163
|
1Mb / 15P |
Unmatched flux density with the lowest thermal resistance enabling never before possible form factors
|
|
PB163
|
1Mb / 2P |
Unmatched flux density with the lowest thermal resistance enabling never before possible form factors
|
Infineon Technologies A... |
AUIRF1018ES
|
664Kb / 10P |
Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
2015-11-23 |
Lumileds Lighting Compa... |
L1V1-407003VX00000
|
1Mb / 15P |
Unmatched flux density with the lowest thermal resistance enabling never before possible form factors
20190504 |
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