IRF820 pdf, IRF820 Bauteilbeschribung, IRF820 Datenblatt, IRF820 view ::: ALLDATASHEET :::

Teilenummer	IRF820

Bauteilbeschribung	N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Filegröße	140.22 Kbytes

Html View	1 2

Hersteller	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

Logo

Ähnliche Teilenummer - IRF820

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	IRF820	92Kb / 8P	N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRF820	322Kb / 6P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF820	157Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
Intersil Corporation	IRF820	54Kb / 7P	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRF820	169Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Motorola, Inc	IRF530	157Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
	IRF840	146Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
	MTD3055EL	380Kb / 6P	TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)
	MTH8N90	394Kb / 6P	POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS
	MTH15N40	500Kb / 5P	N-Channel Enhancement Mode silicon Gate TMOS
	MTH8N40	385Kb / 5P	Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
	MTH8N60	386Kb / 5P	Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
	MTE50N45	391Kb / 7P	POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
	MTM55N10	192Kb / 5P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
New Jersey Semi-Conduct...	MTM60N06	95Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR