| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Samsung semiconductor |
KSK123
|
83Kb / 3P |
N0CHANNEL JUNCTION FET (AF IMPEDANCE CONVERTER)
|
|
KSK65
|
85Kb / 3P |
N-CHANNEL JUNCTION FET (AM IMPEDANCE CONVERTER)
|
NEC |
2SK2552B
|
124Kb / 5P |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
|
2SK3230
|
50Kb / 8P |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
Sanyo Semicon Device |
2SK3796
|
46Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
50Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
52Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier,Impedance Converter Applications
|
Panasonic Semiconductor |
DSKTJ08
|
440Kb / 3P |
Silicon N-channel junction FET For AF impedance converter
|
Sanyo Semicon Device |
TF410
|
318Kb / 3P |
N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications
|
|
2SK3738
|
474Kb / 6P |
N-Channel Junction Silicon FET Impedance Converter Applications
|
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