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Teilenummer	RJK0230DPA

Bauteilbeschribung	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Ähnliche Beschreibung - RJK0230DPA

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	RJK0383DPA	114Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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	HAT2126RP	263Kb / 17P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	358Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2285WP	115Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0214DPA	260Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0215DPA	271Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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