| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
HN3G01J
|
210Kb / 4P |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
|
 GTM CORPORATION |
GS123
|
155Kb / 2P |
NPN EPITAXIAL TRANSISTOR
|
|
GSD2656
|
137Kb / 2P |
NPN EPITAXIAL TRANSISTOR
|
 Chenmko Enterprise Co. ... |
CH882PT
|
117Kb / 4P |
NPN Epitaxial Transistor
|
|
CHTA14ZPT
|
166Kb / 3P |
NPN Epitaxial Transistor
|
 Thinki Semiconductor Co... |
2SC5200
|
281Kb / 2P |
150 Watt Silicon Epitaxial Planar NPN Power Transistor
|
|
NJW0281G
|
1Mb / 4P |
150 Watt Silicon Epitaxial Planar NPN Power Transistor
|
 Shanghai Leiditech Elec... |
BTA04-600SW
|
324Kb / 5P |
Storage junction temperature range Tstg -40 - 150 ?
|
 Thinki Semiconductor Co... |
2SC5200N
|
1Mb / 4P |
150 Watt Silicon Epitaxial Planar NPN Power Transistor
Rev.12T |
|
C5200N
|
1Mb / 4P |
THINKI 150 Watt Silicon Epitaxial Planar NPN Power Transistor
Rev.12T |