IXBK55N300 pdf, IXBK55N300 Bauteilbeschribung, IXBK55N300 Datenblatt, IXBK55N300 view ::: ALLDATASHEET :::

Teilenummer	IXBK55N300

Bauteilbeschribung	High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

Filegröße	221.5 Kbytes

Html View	1 2 3 4 5 6

Hersteller	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Ähnliche Beschreibung - IXBK55N300

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
IXYS Corporation	IXBH42N170	581Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBH12N300	183Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBH24N170	181Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBN42N170A	206Kb / 6P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBA14N300HV	365Kb / 6P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBA16N170AHV	168Kb / 2P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBF32N300	201Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBH16N170	182Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBH20N300	180Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
	IXBR42N170	175Kb / 5P	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor