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IRF640N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IRF640N
Bauteilbeschribung  N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF640N Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF640N，IIRF640N
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤150mΩ
·
Enhancement mode
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Efficient and reliable device for use in a wide variety of applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
18
A
IDM
Drain Current-Single Pulsed
72
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
1
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62
℃
/W


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