TC58FVB160AXB datasheet(12/41 Pages) TOSHIBA

12 / 41 page

TC58FVT160/B160AFT/AXB-70,-10

2002-08-06

12/41

COMMON FLASH MEMORY INTERFACE (CFI)

The TC58FVT160/B160A conforms to the CFI specifications. To read information from the device, input the

Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the

Reset command.

CFI CODE TABLE

ADDRESS A6~A0

DATA DQ15~DQ0

DESCRIPTION

10H

11H

12H

0051H

0052H

0059H

ASCII string “QRY”

13H

14H

0002H

0000H

Primary OEM command set

2: AMD/FJ standard type

15H

16H

0040H

0000H

Address for primary extended table

17H

18H

0000H

Alternate OEM command set

0: none exists

19H

1AH

0000H

Address for alternate OEM extended table

1BH

0027H

VDD (min) (Write/Erase)

DQ7~DQ4: 1 V

DQ3~DQ0: 100 mV

1CH

0036H

VDD (max) (Write/Erase)

DQ7~DQ4: 1 V

DQ3~DQ0: 100 mV

1DH

0000H

VPP (min) voltage

1EH

0000H

VPP (max) voltage

1FH

0004H

Typical time-out per single byte/word write (2

N µs)

20H

0000H

Typical time-out for minimum size buffer write (2

N µs)

21H

000AH

Typical time-out per individual block erase (2

ms)

22H

0000H

Typical time-out for full chip erase (2

ms)

23H

0005H

Maximum time-out for byte/word write (2

times typical)

24H

0000H

Maximum time-out for buffer write (2

times typical)

25H

0004H

Maximum time-out per individual block erase (2

times typical)

26H

0000H

Maximum time-out for full chip erase (2

times typical)

27H

0015H

Device Size (2

byte)

28H

29H

0002H

0000H

Flash device interface description

×8/×16

2AH

2BH

0000H

Maximum number of bytes in multi-byte write (2

)

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