TC58FVB160AXB datasheet(17/41 Pages) TOSHIBA

17 / 41 page

TC58FVT160/B160AFT/AXB-70,-10

2002-08-06

17/41

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RANGE

UNIT

VDD

VDD Supply Voltage

−0.6~4.6

VIN

Input Voltage

−0.6~VDD + 0.5 (≤ 4.6)

VDQ

Input/Output Voltage

−0.6~VDD + 0.5 (≤ 4.6)

VIDH

Maximum Input Voltage for A9, OE and RESET

13.0

Power Dissipation

126

TSOLDER

Soldering Temperature (10 s)

260

°C

TSTG

Storage Temperature

−55~150

°C

TOPR

Operating Temperature

−40~85

°C

IOSHORT

Output Short-Circuit Current

(1)

100

(1) Outputs should be shorted for no more than one second.

No more than one output should be shorted at a time.

CAPACITANCE (Ta

==== 25°C, f ==== 1 MHz)

TSOPI

SYMBOL

PARAMETER

CONDITION

MAX

UNIT

CIN

Input Pin Capacitance

VIN = 0 V

COUT

Output Pin Capacitance

VOUT = 0 V

CIN2

Control Pin Capacitance

VIN = 0 V

This parameter is periodically sampled and is not tested for every device.

TFBGA

SYMBOL

PARAMETER

CONDITION

MAX

UNIT

CIN

Input Pin Capacitance

VIN = 0 V

COUT

Output Pin Capacitance

VOUT = 0 V

CIN2

Control Pin Capacitance

VIN = 0 V

This parameter is periodically sampled and is not tested for every device.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

MIN

MAX

UNIT

VDD

VDD Supply Voltage

2.7

3.6

VIH

Input High-Level Voltage

0.7

× VDD

VDD + 0.3

(2)

VIL

Input Low-Level Voltage

−0.3

(1)

0.2

× VDD

VID

High-Level Voltage for A9, OE and RESET

(3)

11.4

12.6

Operating Temperature

−40

°C

(1)

−2 V (pulse width of 20 ns max)

(2)

+2 V (pulse width of 20 ns max)

(3) Do not apply VID when the supply voltage is not within the device’s recommended operating voltage range.

TC58FVB160AXB Datenblatt(PDF) 17 Page - Toshiba Semiconductor

TC58FVB160AXB Datenblatt(HTML) 17 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41

Datenblatt Download

Link URL