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K6F8016R6D Datenblatt(PDF) 9 Page - Samsung semiconductor |
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K6F8016R6D Datenblatt(HTML) 9 Page - Samsung semiconductor |
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9 / 9 page ![]() K6F8016R6D Family Revision 0.1 September 2004 9 CMOS SRAM Preliminary PACKAGE DIMENSION 65 4 3 2 1 A B C D E F G H B B Bottom View Top View D C Side View A Y Detail A Min Typ Max A - 0.75 - B 5.90 6.00 6.10 B1 - 3.75 - C 6.90 7.00 7.10 C1 - 5.25 - D 0.40 0.45 0.50 E- - 1.00 E1 0.27 - - Y- - 0.10 B1 #A1 Notes. 1. Bump counts: 48(8 row x 6 column) 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.) 3. All tolerence are ±0.050 unless specified beside figure. 4. Typ: Typical 5. Y is coplanarity: 0.10(Max) Unit: millimeters 48 BALL FINE PITCH BGA(0.75mm ball pitch) |
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