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TMUX1102DBVR Datenblatt(PDF) 12 Page - Texas Instruments |
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TMUX1102DBVR Datenblatt(HTML) 12 Page - Texas Instruments |
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12 / 31 page ![]() 12 TMUX1101, TMUX1102 SCDS410 – MARCH 2019 www.ti.com Product Folder Links: TMUX1101 TMUX1102 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Electrical Characteristics (VDD = 1.2 V ±10 %) (continued) PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT DYNAMIC CHARACTERISTICS tTRAN Transition time from control input VS = 1 V RL = 200 Ω, CL = 15 pF Refer to Transition time 25°C 55 ns –40°C to +85°C 190 ns –40°C to +125°C 190 ns QC Charge Injection VS = 1 V RS = 0 Ω, CL = 1 nF Refer to Charge injection 25°C –0.5 pC OISO Off Isolation RL = 50 Ω, CL = 5 pF f = 1 MHz Refer to Off isolation 25°C –62 dB RL = 50 Ω, CL = 5 pF f = 10 MHz Refer to Off isolation 25°C –40 dB BW Bandwidth RL = 50 Ω, CL = 5 pF Refer to Bandwidth 25°C 300 MHz CSOFF Source off capacitance f = 1 MHz 25°C 6 pF CDOFF Drain off capacitance f = 1 MHz 25°C 10 pF CSON CDON On capacitance f = 1 MHz 25°C 18 pF |
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