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PRM4R2N08CT Datenblatt(PDF) 2 Page - PFC Device Inc.

Teilenummer PRM4R2N08CT
Bauteilbeschribung  80V Single N-Channel MOSFET
PDF  8 Pages
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Hersteller  PFC [PFC Device Inc.]
Direct Link  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM4R2N08CT Datenblatt(HTML) 2 Page - PFC Device Inc.

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Characteristics
Version 4.1
2 / 8
www.pfc-device.com
PRM4R2N08CT
1. Characteristics
Maximum Ratings Characteristics
( TA = 25
oC unless otherwise specified )
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
+20/-12
V
ID
4
Drain Current – Continuous (TC=25
℃)
164
A
Drain Current – Continuous (TC=100
℃)
103
A
ID
5
Drain Current – Continuous (TC=25
℃)
110
A
IDM
Drain Current – Pulsed
1
440
A
EAS
Single Pulse Avalanche Energy
2
92
mJ
IAS
Single Pulse Avalanche Current
2
43
A
PD
Power Dissipation (TC=25
℃)
192
W
Power Dissipation – Derate above 25
℃
1.53
W/
℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
RθJC
Thermal Resistance Junction to Case
---
0.65
℃/W



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