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PRM4R2N08CT Datenblatt(PDF) 3 Page - PFC Device Inc.

Teilenummer PRM4R2N08CT
Bauteilbeschribung  80V Single N-Channel MOSFET
PDF  8 Pages
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Hersteller  PFC [PFC Device Inc.]
Direct Link  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM4R2N08CT Datenblatt(HTML) 3 Page - PFC Device Inc.

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Characteristics
Version 4.1
3 / 8
www.pfc-device.com
PRM4R2N08CT
Electrical Characteristics
( TJ = 25
oC unless otherwise specified )
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
80
---
---
V
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V, TJ=25
℃
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=20V, VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
---
---
4.2
mΩ
VGS=4.5V, ID=10A
---
---
9.5
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=250uA
1.0
---
2.5
V
gfs
Forward Transconductance
VDS=5V, ID=20A
---
43
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge
VDS=40V, VGS=10V, ID=20A
---
80
---
nC
Qgs
Gate-Source Charge
---
13.5
---
Qgd
Gate-Drain Charge
---
27
---
Td(on)
Turn-On Delay Time
VDD=40V, VGS=10V, RG=6Ω
ID=20A
---
24
---
ns
Tr
Turn-On Rise Time
---
100
---
Td(off)
Turn-Off Delay Time
---
71
---
Tf
Turn-Off Fall Time
---
140
---
Ciss
Input Capacitance
VDS=40V, VGS=0V, f=1MHz
---
4150
---
pF
Coss
Output Capacitance
---
1200
---
Crss
Reverse Transfer Capacitance
---
50
---
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
---
1.5
---
Ω
Drain-Source Diode Characteristics
VSD
3
Source to Drain Diode Voltage
VGS=0V, IS=20A
---
---
1.5
V
trr
Reverse Recovery Time
IS=20A, di/dt=100A/us
---
67
---
ns
Qrr
Reverse Recovery Charge
---
105
---
nC
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V, VGS=10V, L=0.1mH, IAS=43A, RG=25Ω, Starting TJ=25
℃
3. The data tested by pulsed, pulse width
≦300us, duty cycle ≦2%.
4. Silicon limited.
5. Package limited.



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