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54HC02 Datenblatt(PDF) 4 Page - Silicon Supplies |
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54HC02 Datenblatt(HTML) 4 Page - Silicon Supplies |
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4 / 5 page ![]() High Speed CMOS Logic – 54HC02 DC Electrical Characteristics Continued (Voltages Referenced to GND) Rev 1.0 22/04/19 LIMITS PARAMETER 3. Not production tested in die form, characterized by chip design and tested in package LAT. 4. Used to determine the no-load dynamic power consumption: PD = CPD VCC 2f + ICC VCC. SYMBOL VCC CONDITIONS ≤ 125°C UNITS -55°C to 25°C ≤ 85°C 2.0V 1.9 1.9 1.9 4.5V 4.4 4.4 4.4 6.0V VIN = VIH or VIL │IOUT│≤ 20µA 5.9 5.9 5.9 V 3.0V VIN = VIH or VIL │IOUT│≤ 2.4mA 2.48 2.34 2.20 4.5V VIN = VIH or VIL │IOUT│≤ 4.0mA 3.98 3.84 3.70 Minimum High-Level Output Voltage VOH 6.0V VIN = VIH or VIL │IOUT│≤ 5.2mA 5.48 5.34 5.20 V 2.0V 0.1 0.1 0.1 4.5V 0.1 0.1 0.1 6.0V VIN = VIL or VIL │IOUT│≤ 20µA 0.1 0.1 0.1 V 3.0V VIN = VIL or VIL │IOUT│≤ 2.4mA 0.26 0.33 0.40 4.5V VIN = VIL or VIL │IOUT│≤ 4.0mA 0.26 0.33 0.40 Maximum Low-Level Output Voltage VOL V VIN = VIL or VIL 6.0V │IOUT│≤ 5.2mA 0.26 0.33 0.40 Maximum Input Leakage Current IIN 6.0V VIN = VCC or GND ±0.1 ±1.0 ±1.0 µA Maximum Quiescent VIN = VCC or GND Supply Leakage Current 3 ICC 6.0V IOUT = 0µA 1 10 40 µA AC Electrical Characteristics3 LIMITS PARAMETER SYMBOL VCC CONDITIONS UNITS -55°C to 25°C ≤ 85°C ≤ 125°C 2.0V 75 95 110 3.0V 30 40 55 4.5V 15 19 22 Maximum Propagation Delay, Input A or B to CL = 50pF, Output Y (Figure 1,2) tPLH, tPHL ns tr = tf = 6ns 6.0V 13 16 19 2.0V 75 95 110 3.0V 30 40 55 4.5V 15 19 22 Maximum Output Rise and Fall Time, CL = 50pF, Any Output (Figure 1,2) tTLH, tTHL ns tr = tf = 6ns 6.0V 13 16 19 Page 4 of 5 www.siliconsupplies.com |
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