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HN58V66API-10 Datenblatt(PDF) 7 Page - Renesas Technology Corp

Teilenummer HN58V66API-10
Bauteilbeschribung  64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
PDF  28 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HN58V66API-10 Datenblatt(HTML) 7 Page - Renesas Technology Corp

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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 7 of 26
Capacitance (Ta = +25
°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin*
1
6
pF
Vin = 0 V
Output capacitance
Cout*
1
12
pF
Vout = 0 V
Note:
1. This parameter is sampled and not 100% tested.
AC Characteristics
(Ta =
−40 to +85°C, V
CC = 2.7 to 5.5 V: HN58V65AI/HN58V66AI,
Ta =
−20 to +85°C, V
CC = 2.7 to 5.5 V: HN58V65A-SR/HN58V66A-SR)
Test Conditions
• Input pulse levels :
0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 3.0 V (VCC = 3.6 to 5.5 V)
0 V to VCC (RES pin*
2)
• Input rise and fall time : ≤ 5 ns
• Input timing reference levels : 0.8, 1.8 V
• Output load : 1TTL Gate +100 pF
• Output reference levels : 1.5 V, 1.5 V
Read Cycle 1 (2.7
≤ V
CC
< 4.5 V)
HN58V65AI/HN58V66AI
HN58V65A-SR/HN58V66A-SR
-10
Parameter
Symbol
Min
Max
Unit Test conditions
Address to output delay
tACC
100
ns
CE = OE = V
IL, WE = VIH
CE to output delay
tCE
100
ns
OE = V
IL, WE = VIH
OE to output delay
tOE
10
50
ns
CE = V
IL, WE = VIH
Address to output hold
tOH
0
ns
CE = OE = V
IL, WE = VIH
OE (CE) high to output float*1 t
DF
0
40
ns
CE = V
IL, WE = VIH
RES low to output float*1, 2
tDFR
0
350
ns
CE = OE = V
IL, WE = VIH
RES to output delay*2
tRR
0
450
ns
CE = OE= V
IL, WE = VIH



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