TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT

TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT

DYNAMIC RAM MODULE

SMMS137E – JANUARY 1991 – REVISEDJUNE 1995

1

POST OFFICE BOX 1443

TM124MBK36B ...1048 576

× 36

TM248NBK36B ...2097 152

× 36

Module (SIMM) for Use With Sockets

DRAMs in Plastic Small-Outline J-Lead

(SOJ) Packages and One 4-Megabit

Quad-CAS DRAM in a Plastic Small-Outline

J-Lead (SOJ) Package

DRAMs in Plastic Small-Outline J-Lead

(SOJ) Packages and Two 4-Megabit

Quad-CAS DRAMs in Plastic Small-Outline

J-Lead (SOJ) Packages

16 ms (1024 Cycles)

Compatible

Data-In and Data-Out Lines, in Four Blocks

CAS-Before-RAS ( CBR ), RAS-Only, and

Hidden Refresh

ACCESS

ACCESS ACCESS READ

TIME

TIME

TIME

OR

tRAC

tAA

tCAC

WRITE

CYCLE

(MAX)

(MAX)

(MAX)

(MIN)

’124MBK36B-60 60 ns

30 ns

15 ns

110 ns

’124MBK36B-70 70 ns

35 ns

18 ns

130 ns

’124MBK36B-80 80 ns

40 ns

20 ns

150 ns

’248NBK36B-60

60 ns

30 ns

15 ns

110 ns

’248NBK36B-70

70 ns

35 ns

18 ns

130 ns

’248NBK36B-80

80 ns

40 ns

20 ns

150 ns

0

°C to 70°C

– TM124MBK36B

– TM248NBK36B

Available:

– TM124MBK36R

– TM248NBK36R

description

TM124MBK36B

The TM124MBK36B is a dynamic random-access memory (DRAM) organized as four times 1 048 576

× 9

(bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is

composed of eight TMS44400DJ, 1 048 576

× 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead

packages (SOJs), and one TMS44460DJ, 1 048 576

× 4-bit Quad-CAS DRAM in a 24/26-lead plastic

small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ

and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively.

The TM124MBK36B is available in the single-sided BK leadless module for use with sockets.

The TM124MBK36B features RAS access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation

from 0

°C to 70°C.

TM248NBK36B

The TM248NBK36B is a DRAM organized as four times 2 097 152

× 9 (bit 9 is generally used for parity) in a

72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1 048 576

× 4-bit DRAMs, each in

20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1 048 576

× 4-bit Quad-CAS

DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with

decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460

data sheet, respectively.

Copyright

© 1995, Texas Instruments Incorporated

† Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.