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GD9FS1G8F2AMG Datenblatt(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD9FS1G8F2AMG Datenblatt(HTML) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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44 / 55 page ![]() GD9Fx1GxF2A 44 12. AC CHARACTERISTICS 12.1 Test Condition (TA=-40 to 85°CVcc=1.7V~1.95V /2.7V~3.6V) Parameter GD9FS1G8F2A/GD9FU1G8F2A Input Pulse Levels 0V to VCC Input Rise and Fall Times 5ns Input and Output Timing Levels VCC/2 Output Load 1 TTL GATE and CL=30fF 12.2 Capacitance (TA=25°C, F=1.0MHz) Parameter Symbol Test condition Min Max Unit Input/Output Capacitance CI/O VIL=0V - 6 pF Input Capacitance CIN VIN=0V - 8 pF Notes: Capacitance is periodically sampled and not 100% tested. |
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