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GD25LB128DSJS Datenblatt(PDF) 59 Page - GigaDevice Semiconductor (Beijing) Inc.

Teilenummer GD25LB128DSJS
Bauteilbeschribung  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  75 Pages
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Hersteller  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Direct Link  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LB128DSJS Datenblatt(HTML) 59 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LB128D
59
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table6. Power-Up Timing And Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage VCC (min)
1
1.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
bits are set to 0, except QE bit (S9) is set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
-40 to 105
-40 to 125
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 2.5
V



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