3.0A，800V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

3N80H

6.

Electrical characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

800

-

-

V

-

-

1

μA

Zero gate voltage drain current

-

-

10

μA

Forward

-

-

100

nA

Gate-body leakage current

Reverse

-

-

-100

nA

-

1

-

V/°C

On characteristics

Gate threshold voltage

3.0

-

5.0

V

Static drain-source on-resistance

-

4.0

4.8

Ω

Dynamic characteristics

Input capacitance

-

543

705

pF

Output capacitance

-

54

70

pF

Reverse transfer capacitance

f=1MHz

-

5.5

7.5

pF

Switching characteristics

Turn-on delay time

-

15

40

ns

Rise time

-

43.5

95

ns

Turn-off delay time

-

22.5

55

ns

Fall time

-

32

75

ns

Total gate charge

-

13

16.5

nC

Gate-source charge

-

3.4

-

nC

Gate-drain charge

-

5.8

-

nC

Drain-source diode characteristics

Drain-source diode forward voltage

-

-

1.4

V

Continuous drain-source current

-

-

3.0

A

Pulsed drain-source current

-

-

12.0

A

Reverse recovery time

-

642

-

ns

Reverse recovery charge

(note4)

-

4.0

-

μC

Note:1.repetitive rating:pulse width limited by maximum junction temperature

4.Pulse test:pulse width<300μs,duty cycle<2%

5.Essentially independent of operating temperature

3 of 5