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3N80H Datenblatt(PDF) 1 Page - KIA Semiconductor Technology |
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3N80H Datenblatt(HTML) 1 Page - KIA Semiconductor Technology |
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1 / 5 page ![]() 3.0A,800V N-CHANNEL MOSFET KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 3N80H 1. Description The KIA3N80H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,solenoid,motor drivers,relay drivers. 2. Features RDS(on)=4.8Ω @ VGS=10V Low gate charge ( typical 13nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 1 of 5 |
Ähnliche Teilenummer - 3N80H |
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Ähnliche Beschreibung - 3N80H |
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