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BFP196W Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BFP196W
Bauteilbeschribung  isc Silicon NPN RF Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFP196W Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN RF Transistor
BFP196W
DESCRIPTION
·
Low Noise Figure
NF = 1.3 dB TYP.
@VCE = 6 V, IC = 5 mA, f = 1GHz
·
High Gain
︱
S21︱2 = 18dB TYP.
@VCE= 6 V,IC = 30 mA,f = 1GHz
·
Minimum Lot-to-Lot variations for robust
device performance and reliable operation
APPLICATIONS
·
Designed for use in low noise ,high-gain
amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
100
mA
PC
Collector Power Dissipation
@TC=25℃
700
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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