TC6320 datasheet(4/14 Pages) MICROCHIP

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TC6320

DS20005697A-page 4

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage ........................................................................................................................................ BVDSS

Drain-to-gate Voltage ........................................................................................................................................... BVDGS

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

N-CHANNEL ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = TJ = 25°C unless otherwise specified.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1 unless otherwise specified)

Drain-to-source Breakdown Voltage

BVDSS

200

—

VGS = 0V, ID = 2 mA

Gate Threshold Voltage

VGS(th)

—

VGS = VDS, ID = 1 mA

Change in VGS(th) with Temperature

∆VGS(th)

—

–4.5

mV/°C VGS = VDS, ID = 1 mA (Note 2)

Gate-to-source Shunt Resistor

RGS

—

kΩ

IGS = 100 µA

Gate-to-Source Zener Voltage

VZGS

13.2

—

IGS = 2 mA

Zero-gate Voltage Drain Current

IDSS

—

µA

VDS = Maximum rating, 

VGS = 0V

—

VDS = 0.8 Maximum rating,

VGS = 0V, TA = 125°C (Note 2)

On-state Drain Current

ID(ON)

—

VGS = 4.5V, VDS = 25V

—

VGS = 10V, VDS = 25V

Static Drain-to-source On-state



Resistance

RDS(ON)

—

Ω

VGS = 4.5V, ID = 150 mA

—

VGS = 10V, ID = 1A

Change in RDS(ON) with Temperature ∆RDS(ON)

—

%/°C

VGS = 4.5V, ID = 150 mA (Note 2)

AC PARAMETER (Note 2)

Forward Transconductance

GFS

400

—

mmho VDS = 25V, ID = 500 mA

Input Capacitance

CISS

—

110

VGS = 0V,

VDS = 25V,

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-on Delay Time

td(ON)

—

VDD = 25V,

ID = 1A,

RGEN = 25Ω

Rise Time

—

Turn-off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = 0V, ISD = 500 mA (Note 1)

Reverse Recovery Time

trr

—

300

—

VGS = 0V, ISD = 500 mA (Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

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