P-CHANNEL ELECTRICAL CHARACTERISTICS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1 unless otherwise specified)

Drain-to-source Breakdown Voltage

–200

—

—

V

Gate Threshold Voltage

–1

—

–2.4

V

—

—

4.5

Gate-to-source Shunt Resistor

10

—

50

kΩ

Gate-to-Source Zener Voltage

13.2

—

25

V

Zero-gate Voltage Drain Current

—

—

–10

µA

—

—

–1

mA

On-state Drain Current

–1

—

—

A

–2

—

—

Static Drain-to-source On-state



Resistance

—

—

10

Ω

—

—

8

—

—

1

%/°C

AC PARAMETER (Note 2)

Forward Transconductance

400

—

—

Input Capacitance

—

—

200

pF

f = 1 MHz

Common Source Output

Capacitance

—

—

55

pF

Reverse Transfer Capacitance

—

—

30

pF

Turn-on Delay Time

—

—

10

ns

Rise Time

—

—

15

ns

Turn-off Delay Time

—

—

20

ns

Fall Time

—

—

15

ns

DIODE PARAMETER

Diode Forward Voltage Drop

—

—

–1.8

V

Reverse Recovery Time

—

300

—

ns

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55°C

—

+150

°C

Storage Temperature

–55°C

—

+150

°C

PACKAGE THERMAL RESISTANCE

8-lead DFN

—

44

—

°C/W

Note 1

8-lead SOIC

—

101

—

°C/W

Note 1

 2017 Microchip Technology Inc.

DS20005697A-page 5

TC6320

Note 1: 1 oz., four-layer, 3” x 4” PCB