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LBC848BWT1G Datenblatt(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LBC848BWT1G Datenblatt(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 9 page ![]() ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE (I C = 2.0 mA, V CE = 5.0 V) 110 180 220 200 290 450 420 520 800 Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) — — 0.25 V Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — — 0.6 Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) — 0.7 — V Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — 0.9 — Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) 580 660 700 mV Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) — — 770 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T 100 — — MHz (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF Noise Figure (I C = 0.2 mA, NF dB V CE = 5.0 Vdc, R S = 2.0 k Ω, — — 10 f = 1.0 kHz, BW = 200 Hz) — — 4.0 LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846A, LBC847A,L BC848A LBC846B, LBC847B,L BC848B LBC847C, LBC848C LBC846A, LBC847A, LBC848A Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0 100 200 300 0.1 0.01 0.001 0.0001 0 0.02 0.18 Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 1 VCE = 1 V 150°C −55°C 25°C IC/IB = 20 150°C −55°C 25°C 0.4 0.9 IC/IB = 20 150°C −55°C 25°C 0.4 0.7 1.1 VCE = 5 V 150°C −55°C 25°C 0.04 0.06 0.08 0.10 0.12 0.14 0.16 LBC848BWT1G Rev : www.leiditech.com 01.06.2018 2/9 |
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