LBC848BWT1G datasheet(5/9 Pages) LEIDITECH

Teilenummer	LBC848BWT1G

Bauteilbeschribung	General Purpose Transistors NPN Silicon

PDF	9 Pages

Scroll/Zoom	100%

Hersteller	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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5 / 9 page

LBC847B, LBC848B

Figure 17. DC Current Gain vs. Collector

Current

Figure 18. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

100

200

600

0.1

0.01

0.001

0.0001

0.05

0.30

Figure 19. Base Emitter Saturation Voltage vs.

Collector Current

Figure 20. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20

150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1

VCE = 5 V

150°C

−55°C

25°C

0.10

0.15

0.20

0.25

300

400

500

1.0

Figure 21. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 22. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

0.1

0.4

0.8

0.2

1.0

100

-55

°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

LBC848BWT1G

Rev :

www.leiditech.com

01.06.2018

5/9

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