10

Figure 11. Recommended assemble example

Note: No RF performance degradation is seen due to ESD up to 300V HBM and 70V MM. The user is reminded that this device is ESD sensitive and

needs to be handled with all necessary ESD protocols.

RF_OUT

VG=-1.8V

4nH Inductor for operation to 2GHz (200mil bond wire)

100pF

RF_IN

Vg2: Gain control

VD=+5V

100pF