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SM4600CSKC-TRG Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SM4600CSKC-TRG Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 14 page ![]() N- and P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) N-Channel 30 0.011 at VGS = 10 V 13.3 at VGS = 4.5 V 10 P-Channel - 30 0.021 at VGS = - 10 V 13 0.028 at VGS = - 4.5 V - 9.5 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 2 3 4 1 D1 G1 S1 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 9.8 - 8.8 TA = 25 °C 8.8b, c - 7.6b, c TA = 70 °C 7.4b, c - 6.3b, c Pulsed Drain Current (10 µs Pulse Width) IDM 60 - 60 Source-Drain Current Diode Current TC = 25 °C IS 3.6 - 3.6 TA = 25 °C 1.6b, c - 1.6b, c Pulsed Source-Drain Current ISM 60 - 60 Single Pulse Avalanche Current L = 0.1 mH IAS 20 - 20 Single Pulse Avalanche Energy EAS 520 mJ Maximum Power Dissipation TC = 25 °C PD 6.1 5.2 W TC = 70 °C 33.1 TA = 25 °C 3b, c 3b, c TA = 70 °C 2.28b, c 2.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 20 32.5 27 32.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 10 20 19 28 - 10.5 11 - 10.5 11 0.013 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM4600CSKC-TRG 1 |
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