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SM4600CSKC-TRG Datenblatt(PDF) 10 Page - VBsemi Electronics Co.,Ltd

Teilenummer SM4600CSKC-TRG
Bauteilbeschribung  N- and P-Channel 30 V (D-S) MOSFET
PDF  14 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM4600CSKC-TRG Datenblatt(HTML) 10 Page - VBsemi Electronics Co.,Ltd

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
7
8
9
10
11
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM4600CSKC-TRG
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