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PH4530L Datenblatt(PDF) 1 Page - NXP Semiconductors |
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PH4530L Datenblatt(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information PH4530L N-channel TrenchMOS™ logic level FET Rev. 02 — 26 January 2005 Product data sheet s Low thermal resistance s SO8 equivalent area footprint s Logic level gate drive s Low on-state resistance. s DC-to-DC converters s Switched-mode power supplies s Portable appliances s Notebook computers. s VDS ≤ 30 V s ID ≤ 80 A s Ptot ≤ 62.5 W s RDSon ≤ 5.7 mΩ. Table 1: Discrete pinning Pin Description Simplified outline Symbol 1,2,3 source SOT669 (LFPAK) 4 gate mb mounting base; connected to drain 1 Top view 23 mb 4 S D G mbb076 |
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