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LM0804A Datenblatt(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Teilenummer LM0804A
Bauteilbeschribung  N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Hersteller  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM0804A Datenblatt(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=250μA
80
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=80V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=20V,VDS=0V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250μA
1.2
1.6
2.5
V
R
DS(ON)
Drain-Source On-State
Resistance
V
GS=10V, ID=20A
3.2
3.9
mΩ
DYNAMIC PARAMETERS
Clss
Input Capacitance
V
DS=30V,VGS=0V,
F=1.0MHz
5160
pF
Coss
Output Capacitance
1346
pF
Crss
Reverse Transfer Capacitance
40
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
V
DD=40V,ID=1A,
V
GS=10V,
R
G=6Ω
2
0
nS
tr
Turn-on Rise Time
1
3
nS
td(off)
Turn-Off Delay Time
36
nS
tf
Turn-Off Fall Time
18
nS
Qg
Total Gate Charge
V
DS=40V,ID=10A,
VGS=10V
88
nC
Qgs
Gate-Source Charge
10.2
nC
Qgd
Gate-Drain Charge
24
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=10A
0.72
1.
2
V
Rg
Gate resistance
VGS=0V, VDS=0V,
F=1MHz
1.
65
Ω
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=
95A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
V
GS=4.5V, ID=10A
4.5
6.0
mΩ
LM0804A
Rev :
www.leiditech.com
01.06.2018
2/5



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