LM0804A datasheet(1/5 Pages) LEIDITECH

Teilenummer	LM0804A

Bauteilbeschribung	N-Channel Enhancement Mode Field Effect Transistor

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Hersteller	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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General Description

These N-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

VDS

80V

ID

(at VGS=10V)

1

00A

RDS(ON) (at VGS=10V)

3.2mΩ(Typ)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

80

V

Gate-Source Voltage

VGS

+20/-12

V

Drain Current-Continuous

TC=25°C

I

D

1

00

A

TC=100°C

I

D

63

A

Maximum Power Dissipation

P

D

1

42

W

Single pulse avalanche energy(1)

EAS

540

mJ

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance unction-to-Ambient

R

θJA

62

℃

/W

D

G

S

PDFN5x6

D

SG

S

DD

D

Enhancement Mode Field Effect Transistor

N-Channel

LM0804A

Rev :

www.leiditech.com

01.06.2018

1/5

Ähnliche Beschreibung - LM0804A

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