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BAS40V Datenblatt(PDF) 1 Page - Rectron Semiconductor

Teilenummer BAS40V
Bauteilbeschribung  SCHOTTKY BARRIER DIODE
PDF  5 Pages
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Hersteller  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

BAS40V Datenblatt(HTML) 1 Page - Rectron Semiconductor

  BAS40V Datasheet HTML 1Page - Rectron Semiconductor BAS40V Datasheet HTML 2Page - Rectron Semiconductor BAS40V Datasheet HTML 3Page - Rectron Semiconductor BAS40V Datasheet HTML 4Page - Rectron Semiconductor BAS40V Datasheet HTML 5Page - Rectron Semiconductor  
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SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage
Fast Switching
BAS40 MARKING: 43•
BAS40-06 MARKING: 46
BAS40-05 MARKING
45
B AS40-04 MARKING
44
Maximum Ratings @Ta=25
℃
Parameter
Symbol
Limit
Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
40
V
Forward continuous current
IFM
200
mA
Power dissipation
PD
200
mW
Thermal resistance junction to ambient
RθJA
500
℃/W
Junction temperature
TJ
℃
Storage temperature range
TSTG
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Reverse breakdown voltage
V(BR)
IR=10μA
40
V
Reverse voltage leakage current
IR
VR=30V
200
nA
Forward voltage
VF
IF=1mA
IF=40mA
380
1000
mV
Diode capacitance
CD
VR=0,f=1MHz
5
pF
Reverse recovery time
t r r
Irr=1mA, IR=IF=10mA
RL=100Ω
5
ns
SOT-23
MARKING:
BAS40
BAS40-06
BAS40-05
BAS40-04
Solid dot = Green molding compound device,if none,
the normal device.
BAS40V
℃
P/N suffix V means AEC-Q101qualified
P/N suffix V means Halogen-free
-55~+150
, e.g:BAS40V
BAS40-04V
BAS40-05V
BAS40-06V
2020-11/02
REV:O


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