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AT25DF256 Datenblatt(PDF) 34 Page - Dialog Semiconductor

Teilenummer AT25DF256
Bauteilbeschribung  256-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
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AT25DF256
DS-25DF256–035D–2/2017
14.
Power-On/Reset State
When power is first applied to the device, or when recovering from a reset condition, the output pin (SO) will be in a high
impedance state, and a high-to-low transition on the CSB pin will be required to start a valid instruction. The SPI mode
(Mode 3 or Mode 0) will be automatically selected on every falling edge of CSB by sampling the inactive clock state.
14.1 Power-Up/Power-Down Voltage and Timing Requirements
During power-up, the device must not be READ for at least the minimum tVCSL time after the supply voltage reaches the
minimum VPOR level (VPOR min). While the device is being powered-up, the internal Power-On Reset (POR) circuitry
keeps the device in a reset mode until the supply voltage rises above the minimum Vcc. During this time, all operations
are disabled and the device will not respond to any commands.
If the first operation to the device after power-up will be a program or erase operation, then the operation cannot be
started until the supply voltage reaches the minimum VCC level and an internal device delay has elapsed. This delay will
be a maximum time of tPUW. After the tPUW time, the device will be in the standby mode if CSB is at logic high or active
mode if CSB is at logic low. For the case of Power-down then Power-up operation, or if a power interruption occurs (such
that VCC drops below VPOR max), the Vcc of the Flash device must be maintained below VPWD for at least the minimum
specified TPWD time. This is to ensure the Flash device will reset properly after a power interruption.
Table 14-1. Voltage and Timing Requirements for Power-Up/Power-Down
Figure 14-1. Power-Up Timing
Symbol
Parameter
Min
Max
Units
VPWD
(1)
1.
Not 100% tested (value guaranteed by design and characterization).
VCC for device initialization
1.0
V
tPWD
(1)
Minimum duration for device initialization
300
µs
tVCSL
Minimum VCC to chip select low time for Read command
70
µs
tVR
(1)
VCC rise time
1
500000
µs/V
VPOR
Power on reset voltage
1.45
1.6
V
tPUW
Power up delay time before Program or Erase is allowed
3
ms
VCC
V
POR max
Max V
PWD
Time
t
PWD
t
PUW
Full Operation Permitted
t
VR
t
VCSL
Read Operation
Permitted



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