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AT45DB641E Datenblatt(PDF) 48 Page - Dialog Semiconductor

Teilenummer AT45DB641E
Bauteilbeschribung  64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
PDF  72 Pages
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AT45DB641E Datenblatt(HTML) 48 Page - Dialog Semiconductor

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AT45DB641E
DS-45DB641E-
027L–DFLASH–8/2021
18.3
DC Characteristics
Notes: 1.
Typical values measured at 3.0V at 25°C.
2.
ICC2 during a Buffer Read is 20mA maximum @ 20MHz.
Symbol
Parameter
Condition
1.7V to 3.6V
2.3V to 3.6V
Min
Typ
Max
Min
Typ
Max
Unit
s
I
UDPD
Ultra-Deep Power-
Down Current
CS = V
CC. All other
inputs at 0V or V
CC.
0.3
1
0.4
1
µA
I
DPD
Deep Power-Down
Current
CS = V
CC. All other
inputs at 0V or V
CC.
5
25
6
25
µA
I
SB
Standby Current
CS = V
CC. All other
inputs at 0V or V
CC.
25
45
25
45
µA
I
CC1
Active Current,
Low
Power Read (01h)
Operation
f = 1MHz; I
OUT = 0mA
6
9
6
9
mA
f = 15MHz; I
OUT = 0mA
7
11
7
11
mA
I
CC2
(1)(2)
Active Current,
Read Operation
f = 50MHz; IOUT = 0mA
12
17
12
17
mA
f = 85MHz; I
OUT = 0mA
16
22
16
22
mA
I
CC3
Active Current,
Program Operation
CS = V
CC
14
16
14
16
mA
I
CC4
Active Current,
Erase Operation
CS = V
CC
8
12
8
12
mA
I
LI
Input Load Current
All inputs at CMOS
levels
1
1
µA
I
LO
Output Leakage
Current
All inputs at CMOS
levels
1
1
µA
V
IL
Input Low Voltage
V
CC x 0.3
V
CC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.6
VCC x 0.7
VCC + 0.6
V
V
OL
Output Low
Voltage
I
OL = 100µA
0.4
0.4
V
V
OH
Output High
Voltage
I
OH = -100µA
V
CC - 0.2V
V
CC - 0.2V
V



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