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AT45DB641E Datenblatt(PDF) 49 Page - Dialog Semiconductor

Teilenummer AT45DB641E
Bauteilbeschribung  64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
PDF  72 Pages
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AT45DB641E Datenblatt(HTML) 49 Page - Dialog Semiconductor

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48
AT45DB641E
DS-45DB641E-
027L–DFLASH–8/2021
18.4
AC Characteristics
Note:
1.
Values are based on device characterization, not 100% tested in production.
1.7V to 3.6V
2.3V to 3.6V
Symbol
Parameter
Min
Max
Min
Max
Units
f
SCK
SCK Frequency
50
85
MHz
fCAR1
SCK Frequency for Continuous Read (0x0B)
50
85
MHz
f
CAR2
SCK Frequency for Continuous Read (Low Frequency)(0x03)
40
50
MHz
f
CAR3
SCK Frequency for Continuous Read (Low Power Mode
– 01h Opcode)
15
15
MHz
f
CAR4
SCK Frequency for Continuous Read (0x1B)
66
104
MHz
tWH
SCK High Time
4.5
4.5
ns
t
WL
SCK Low Time
4.5
4.5
ns
t
SCKR
(1)
SCK Rise Time, Peak-to-peak
0.1
0.1
V/ns
tSCKF
(1)
SCK Fall Time, Peak-to-peak
0.1
0.1
V/ns
t
CS
Minimum CS High Time
30
30
ns
t
CSS
CS Setup Time
6
5
ns
tCSH
CS Hold Time
5
5
ns
t
SU
Data In Setup Time
2
2
ns
t
H
Data In Hold Time
1
1
ns
tHO
Output Hold Time
0
0
ns
t
DIS
(1)
Output Disable Time
8
6
ns
t
V
Output Valid
7
6
ns
tWPE
WP Low to Protection Enabled
1
1
µs
t
WPD
WP High to Protection Disabled
1
1
µs
t
LOCK
Freeze Sector Lockdown Time (from CS High)
200
200
µs
tEUDPD
(1)
CS High to Ultra-Deep Power-Down
3
3
µs
t
CSLU
Minimum CS Low Time to Exit Ultra-Deep Power-Down
20
20
ns
t
XUDPD
Exit Ultra-Deep Power-Down Time
100
100
µs
tEDPD
(1)
CS High to Deep Power-Down
2
2
µs
t
RDPD
Resume from Deep Power-Down Time
35
35
µs
t
XFR
Page to Buffer Transfer Time
180
180
µs
tCOMP
Page to Buffer Compare Time
180
180
µs
t
RST
RESET Pulse Width
10
10
µs
t
REC
RESET Recovery Time
1
1
µs
t
SWRST
Software Reset Time
35
35
µs



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