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STM8AF6213 Datenblatt(PDF) 90 Page - STMicroelectronics |
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STM8AF6213 Datenblatt(HTML) 90 Page - STMicroelectronics |
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90 / 112 page ![]() Electrical characteristics STM8AF6213/13A/23/23A/26 90/112 DS9884 Rev 9 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC 61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, DLU and LU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (one positive then one negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 59. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fHSE/fCPU(1) 1. Guaranteed by characterization results. 16 MHz/ 8 MHz 16 MHz/ 16 MHz SEMI Peak level VDD = 5 V, TA = 25 °C, LQFP32 package conforming to IEC 61967-2 0.1 MHz to 30 MHz 5 5 dBµV 30 MHz to 130 MHz 4 5 130 MHz to 1 GHz 5 5 EMI level — 2.5 2.5 level Table 60. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Guaranteed by characterization results. Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA = 25°C, conforming to JESD22-A114 3A 4000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA= 25°C, conforming to JESD22-C101 3 500 VESD(MM) Electrostatic discharge voltage (Machine model) TA= 25°C, conforming to JESD22-A115 B 200 |
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