SI7909DN datasheet(4/6 Pages) VISHAY

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Document Number: 71996

S-81544-Rev. D, 07-Jul-08

Vishay Siliconix

Si7909DN

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

Threshold Voltage

- 0.2

- 0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

100

125

150

ID = 700 µA

TJ - Temperature (°C)

Single Pulse Power, Junction-to-Ambient

Time (s)

0.1

600

0.01

0.001

100

Safe Operating Area, Junction-To-Ambient

100

0.1

100

0.01

TA = 25 °C

Single Pulse

P(t) = 10

0.1

IDM Limited

ID(on)

Limited

Limited by RDS(on)*

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

VDS - Drain-to-Source Voltage (V)

*VGS > minimum VGS at which RDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

600

10-1

10-4

100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 65 °C/W

3. T JM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

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