SI7909DN datasheet(1/6 Pages) VISHAY

Teilenummer	SI7909DN

Bauteilbeschribung	Dual P-Channel 12-V (D-S) MOSFET

PDF	6 Pages

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Hersteller	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7909DN

Document Number: 71996

S-81544-Rev. D, 07-Jul-08

www.vishay.com

1

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

•

Halogen-free Option Available

•TrenchFET® Power MOSFETS: 1.8 V Rated

•

New Low Thermal Resistance PowerPAK®

Package

•

Advanced High Cell Density Process

•

Ultra-Low RDS(on), and High PD Capability

APPLICATIONS

•

Load Switch

•

PA Switch

•

Battery Switch

•

Bi-Directional Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 12

0.037 at VGS = - 4.5 V

- 7.7

0.048 at VGS = - 2.5 V

- 6.8

0.068 at VGS = - 1.8 V

- 5.7

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7909DN-T1-E3 (Lead (Pb)-free)

Si7909DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S1

D1

G1

P-Channel MOSFET

S2

D2

G2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 7.7

- 5.3

A

TA = 85 °C

- 5.5

- 3.8

Pulsed Drain Current

IDM

- 20

Continuous Source Current (Diode Conduction)a

IS

- 2.3

- 1.1

Maximum Power Dissipationa

TA = 25 °C

PD

2.8

1.3

W

TA = 85 °C

1.5

0.85

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendationsb, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

35

44

°C/W

Steady State

75

94

Maximum Junction-to-Case

Steady State

RthJC

45

RoHS

COMPLIANT

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