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AP4407GR Datenblatt(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4407GR Datenblatt(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 4 page ![]() Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Lower On-resistance BVDSS -30V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -50A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 2.3 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V -55 to 150 Linear Derating Factor 54 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current, VGS @ 10V -32 Pulsed Drain Current 1 180 200218051 AP4407GR Rating -30 ±25 -50 0.4 Pb Free Plating Product G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) |
Ähnliche Teilenummer - AP4407GR |
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Ähnliche Beschreibung - AP4407GR |
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