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AP4407GR Datenblatt(PDF) 2 Page - Advanced Power Electronics Corp.

Teilenummer AP4407GR
Bauteilbeschribung  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Hersteller  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4407GR Datenblatt(HTML) 2 Page - Advanced Power Electronics Corp.

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AP4407GR
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.01
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-24A
-
-
14
mΩ
VGS=-4.5V, ID=-16A
-
-
23
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-24A
-
36
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±25V
-
-
nA
Qg
Total Gate Charge
2
ID=-24A
-
35
60
nC
Qgs
Gate-Source Charge
VDS=-24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
26
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-24A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
63
-
ns
tf
Fall Time
RD=0.63Ω
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
2120
3390
pF
Coss
Output Capacitance
VDS=-25V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
550
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-24A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-24A, VGS=0V,
-
39
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
±100



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