LMN200B02 datasheet(5/10 Pages) DIODES

Teilenummer	LMN200B02

Bauteilbeschribung	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR

PDF	10 Pages

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Hersteller	DIODES [Diodes Incorporated]

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5 / 10 page

DS30658 Rev. 4 - 2

5 of 10

LMN200B02

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, COLLECTOR CURRENT (A)

Fig. 5 V

vs. I

CE(SAT)

0.6

0.1

0.2

0.3

0.4

0.5

0.01

0.1

I /I = 20

C B

T =

150

°C

T =

125

°C

T =

°C

T =

°C

T =

-55

°C

, COLLECTOR CURRENT (A)

Fig. 4 V

vs. I

CE(SAT)

0.01

0.1

0.2

0.3

0.4

I /I = 10

C B

T =

150

°C

T =

125

°C

T =

-55

°C

T =

°C

T =

°C

I , COLLECTOR CURRENT (mA)

Fig. 7 V

vs. I

BE(ON)

100

1000

0.5

1.5

2.5

I /I = 10

C B

= 5V

T =

°C

T =

125

°C

T =

150

°C

T =

°C

T =

-55

°C

, COLLECTOR CURRENT (mA)

Fig. 6 V

vs. I

BE(SAT)

100

1000

I /I = 10

C B

T =

150

°C

T =

125

°C

T =

°C

T =

-55

°C

T =

°C

I , COLLECTOR CURRENT (mA)

Fig. 8 h

vs. I

100

1000

100

200

300

400

T =

125

°C

= 5V

T =

°C

T =

-55

°C

T =

150

°C

T =

°C

Typical Pre-Biased PNP Transistor (Q1) Characteristics

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