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LMN200B02 Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer LMN200B02
Bauteilbeschribung  200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR
PDF  10 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

LMN200B02 Datenblatt(HTML) 2 Page - Diodes Incorporated

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DS30658 Rev. 4 - 2
2 of 10
LMN200B02
www.diodes.com
@ TA = 25
°C unless otherwise specified
@ TA = 25
°C unless otherwise specified
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Supply Voltage
Vcc
-50
V
Input Voltage
Vin
+5 to -6
V
Output Current
IC
-200
mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS
≤1MOhm)
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
+/-20
V
Pulsed (tp<50 uS)
+/-40
Drain Current (Page 1: Note 3)
Continuous (Vgs = 10V)
ID
115
mA
Pulsed (tp <10 uS, Duty Cycle <1%)
800
Continuous Source Current
IS
115
mA



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