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STM32H757AI Datenblatt(PDF) 115 Page - STMicroelectronics |
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STM32H757AI Datenblatt(HTML) 115 Page - STMicroelectronics |
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115 / 251 page ![]() DS12931 Rev 1 115/251 STM32H757xI Electrical characteristics 230 6.3.5 Embedded reset and power control block characteristics The parameters given in Table 29 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23: General operating conditions. Table 29. Reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit tRSTTEMPO(1) Reset temporization after BOR0 released - - 377 - µs VBOR0 Brown-out reset threshold 0 Rising edge(1) 1.62 1.67 1.71 V Falling edge 1.58 1.62 1.68 VBOR1 Brown-out reset threshold 1 Rising edge 2.04 2.10 2.15 Falling edge 1.95 2.00 2.06 VBOR2 Brown-out reset threshold 2 Rising edge 2.34 2.41 2.47 Falling edge 2.25 2.31 2.37 VBOR3 Brown-out reset threshold 3 Rising edge 2.63 2.70 2.78 Falling edge 2.54 2.61 2.68 VPVD0 Programmable Voltage Detector threshold 0 Rising edge 1.90 1.96 2.01 Falling edge 1.81 1.86 1.91 VPVD1 Programmable Voltage Detector threshold 1 Rising edge 2.05 2.10 2.16 Falling edge 1.96 2.01 2.06 VPVD2 Programmable Voltage Detector threshold 2 Rising edge 2.19 2.26 2.32 Falling edge 2.10 2.15 2.21 VPVD3 Programmable Voltage Detector threshold 3 Rising edge 2.35 2.41 2.47 Falling edge 2.25 2.31 2.37 VPVD4 Programmable Voltage Detector threshold 4 Rising edge 2.49 2.56 2.62 Falling edge 2.39 2.45 2.51 VPVD5 Programmable Voltage Detector threshold 5 Rising edge 2.64 2.71 2.78 Falling edge 2.55 2.61 2.68 VPVD6 Programmable Voltage Detector threshold 6 Rising edge 2.78 2.86 2.94 Falling edge in Run mode 2.69 2.76 2.83 Vhyst_BOR_PVD Hysteresis voltage of BOR (unless BOR0) and PVD Hysteresis in Run mode - 100 - mV IDD_BOR_PVD(1) BOR(2) (unless BOR0) and PVD consumption from VDD - - 0.630 µA |
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