 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
STM32H757AI Datenblatt(PDF) 117 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32H757AI Datenblatt(HTML) 117 Page - STMicroelectronics |
|
|
117 / 251 page  DS12931 Rev 1 117/251 STM32H757xI Electrical characteristics 230 6.3.7 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 14: Current consumption measurement scheme. All the run-mode current consumption measurements given in this section are performed with a CoreMark code. Typical and maximum current consumption The MCU is placed under the following conditions: • All I/O pins are in analog input mode. • All peripherals are disabled except when explicitly mentioned. • The Flash memory access time is adjusted with the minimum wait states number, depending on the fACLK frequency (refer to the table “Number of wait states according to CPU clock (frcc_c_ck) frequency and VCORE range” available in the reference manual). • When the peripherals are enabled, the AHB clock frequency is the CPU 1 frequency divided by 2 and the APB clock frequency is AHB clock frequency divided by 2. The parameters given in the below tables are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 23: General operating conditions. VREFINT_DIV1 1/4 reference voltage - - 25 - % VREFINT VREFINT_DIV2 1/2 reference voltage - - 50 - VREFINT_DIV3 3/4 reference voltage - - 75 - 1. The shortest sampling time for the application can be determined by multiple iterations. 2. Guaranteed by design. Table 30. Embedded reference voltage (continued) Symbol Parameter Conditions Min Typ Max Unit Table 31. Internal reference voltage calibration values Symbol Parameter Memory address VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA = 3.3 V 1FF1E860 - 1FF1E861 |
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
